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Compound Semiconductors Strained Layers and Devices 87 The use of this algorithm 9783642434266
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Compound Semiconductors Strained Layers and Devices 87 The use of this algorithm 9783642434266
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Compound Semiconductors Strained Layers and Devices 87 The use of this algorithm 9783642434266 The use of this algorithm removes many of the inaccuracies that occurred with the use of previous models the closure problem During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain Auger recombination increases rapidly as the bandgap narrows and temperature increases
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Compound Semiconductors Strained Layers and Devices 87 The use of this algorithm 9783642434266
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